agilent AMMP-6220 6-20 ghz low noise amplifier data sheet attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class 1a) esd human body model (class 0) refer to agilent application note a004r: electrostatic discharge damage and control. features 5x5 mm surface mount package broad band performance 6-20 ghz low 2.5 db typical noise figure high 22 db typical gain 50 w input and output match single 3 v (55 ma) supply bias applications microwave radio systems satellite vsat, dbs up/down link lmds & pt-pt mmw long haul broadband wireless access (in- cluding 802.16 and 802.20 wimax) wll and mmds loops commercial grade military description agilent? AMMP-6220 is a high gain, low-noise amplifier that operates from 6 ghz to 20 ghz. the lna is designed to be a easy-to-use compo- nent for any surface mount pcb application. the broad and uncondi- tionally stable performance makes this lna ideal for primary, sub- sequential or driver low noise gain stages. intended applications in- clude microwave radios, 802.16, automotive radar, vsat, and satel- lite receivers. since one part can cover several bands, the AMMP-6220 can reduce part inventory and in- crease volume purchase options. the lna has integrated 50 w i/o match, dc blocking, self-bias and choke to eliminate complex tuning and as- functional diagram sembly processes typically re- quired by hybrid (discrete-fet) amplifiers. the package is full smt compatible with backside grounding and i/o to simplify assembly. 84 123 765 100 pf 100 pf package base gnd pin 1 2 3 4 5 6 7 8 v d rf out rf in function
2 AMMP-6220 absolute maximum ratings [1] symbol parameters/conditions units min. max. v d positive drain voltage v 7 i d drain current ma 100 p in cw input power dbm 15 t ch operating channel temp. c +150 t stg storage case temp. c -65 +150 t max maximum assembly temp. c +300 (60 sec max.) note: 1. operation in excess of any one of these conditions may result in permanent damage to this device. AMMP-6220 dc specifications/physical properties [1] symbol parameters and test conditions units min. typ. max. i d drain supply current (under any ma 55 70 rf power drive and temperature) (v d = 3.0 v) q ch-b thermal resistance [2] (backside temperature, t b = 25 c) c/w 27 notes: 1. ambient operational temperature t a = 25 c unless otherwise noted. 2. channel-to-backside thermal resistance (t channel (t c ) = 34 c) as measured using infrared microscopy. thermal resistance at backside temperature (t b ) = 25 c calculated from measured data. AMMP-6220 rf specifications [3, 4, 6] t a = 25 c, v d = 3.0 v, i d(q) = 55 ma, z o = 50 w symbol parameters and test conditions units typical sigma gain small-signal gain [5] db 22 0.5 nf noise figure into 50 w [5] db 2.5 0.2 p -1db output power at 1db gain compression dbm +10 0.8 oip3 third order intercept point; dbm +20 1.1 ? f = 100 mhz; pin = -20 dbm rlin input return loss db -12 0.3 rlout output return loss db -16 0.7 isol reverse isolation db -45 0.5 notes: 3. small/large -signal data measured in a fully de-embedded test fixture form t a = 25 c. 4. pre-assembly into package performance verified 100% on-wafer per ammc-6220 published specifications. 5. this final package part performance is verified by a functional test correlated to actual performance at one or more frequenc ies. 6. specifications are derived from measurements in a 50 w test environment. aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise ( g opt) matching.
3 figure 1. gain. AMMP-6220 typical performances (t a = 25 c, v d =3 v, i d = 55 ma, z in = z out = 50 w unless otherwise stated) note: these measurements are in 50 w test environment. aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise ( g opt) matching. figure 2. isolation. figure 3. input return loss. figure 4. output return loss. figure 5. noise figure. figure 6. typical power, op-1db and oip3. figure 7. gain over temperature. figure 8. isolation over temperature. figure 9. input return loss over temperature. 25 20 10 0 468 12 2022 frequency (ghz) s21 (db) 10 14 5 15 16 18 0 -10 -20 -40 -60 468 12 2022 frequency (ghz) s21 (db) 10 14 -50 -30 16 18 0 -5 -20 46 8 12 2022 frequency (ghz) s11 (db) 10 14 -15 -10 16 18 0 -5 -10 -20 -30 468 12 2022 frequency (ghz) s22 (db) 10 14 -25 -15 16 18 4.0 3.0 1.0 0 6 8 12 18 20 frequency (ghz) nf (db) 3.5 10 14 1.5 0.5 2.5 2.0 16 25 5 0 6 8 12 18 20 frequency (ghz) op-1db & oip3 (dbm) 20 10 14 10 15 16 p-1db oip3 30 25 20 10 0 468 12 2022 frequency (ghz) s21 (db) 10 14 5 15 16 18 +25 c -40 c +85 c 0 -10 -20 -40 -60 468 12 2022 frequency (ghz) s12 (db) 10 14 -50 -30 16 18 +25 c -40 c +85 c 0 -5 -15 -20 468 12 2022 frequency (ghz) s11 (db) 10 14 -10 16 18 +25 c -40 c +85 c
4 AMMP-6220 typical performances (t a = 25 c, v d = 3 v, i d = 55 ma, z in = z out = 50 w unless otherwise stated) note: these measurements are in 50 w test environment. aspects of the amplifier performance may be improved over a narrower bandwidth by appli- cation of additional conjugate, linearity or low noise ( g opt) matching. figure 10. output return loss over temperature. figure 11. nf over temperature. figure 12. bias current over temperature. figure 13. gain over vdd. figure 14. isolation over vdd. figure 15. input rl over vdd. figure 16. output return loss over temperature. figure 17. noise figure over vdd. figure 18. oip3 over vdd. 0 -5 -10 -20 -30 468 12 2022 frequency (ghz) s22 (db) 10 14 -25 -15 16 18 +25 c -40 c +85 c 4.0 3.0 1.0 0 6 8 12 18 20 frequency (ghz) nf (db) 3.5 10 14 1.5 0.5 2.5 2.0 16 +25 c -40 c +85 c 25 20 15 0 468 12 2022 frequency (ghz) s21 (db) 10 14 5 10 16 18 3 v 4 v 5 v 0 -10 -20 -60 468 12 2022 frequency (ghz) s12 (db) 10 14 -50 -40 -30 16 18 3 v 4 v 5 v 0 -5 -20 468 12 2022 frequency (ghz) s11 (db) 10 14 -15 -10 16 18 3 v 4 v 5 v 0 -5 -10 -30 468 12 2022 frequency (ghz) s22 (db) 10 14 -25 -20 -15 16 18 3 v 4 v 5 v 3.0 2.5 2.0 0 6 8 12 20 frequency (ghz) nf (db) 10 14 0.5 1.0 1.5 16 18 3 v 4 v 5 v 25 5 0 6 8 12 18 20 frequency (ghz) oip3 (dbm) 20 10 14 10 15 16 3 v 4 v 5 v 62 52 50 3.0 5.0 vdd (v) idd (ma) 60 3.5 4.0 56 54 58 4.5 +25 c -40 c +85 c
5 AMMP-6220 typical scattering parameters [1] (t a = 25 c, v d = 3 v, zo = 50 w ) s11 s21 s12 s22 freq ghz db mag phase db mag phase db mag phase db mag phase 2.0 -1.46 0.845 65.6 -28.9 0.036 -62.0 -60 0.001 70.9 -4.8 0.570 85.5 2.5 -1.03 0.888 -4.4 -10.6 0.292 -147.1 -51 0.003 12.1 -9.6 0.330 38.7 3.0 -0.40 0.955 -83.9 6.1 2.027 96.8 -46 0.005 -72. -8.8 0.361 18.1 3.5 -4.65 0.585 -150.2 10.6 3.420 -71.3 -56 0.001 136.7 -6.3 0.483 -46.1 4.0 -1.67 0.825 153.6 6.2 2.051 -104.2 -61 0.001 143.5 -6.1 0.491 -118.9 4.5 -1.39 0.851 72.8 16.6 6.764 -178.3 -49 0.003 -86.3 -9.3 0.342 174.4 5.0 -2.80 0.724 18.7 19.6 9.563 93.3 -45 0.005 140.2 -10.8 0.286 125.8 5.5 -1.59 0.832 -65.0 22.8 13.836 9.3 -44 0.006 26.4 -15.5 0.166 79.4 6.0 -4.66 0.585 -144.6 23.5 15.077 -72.4 -50 0.003 -66.8 -16.9 0.141 64.2 6.5 -8.62 0.370 148.4 23.6 15.218 -145.1 -55 0.002 -116.2 -16.7 0.146 31.4 7.0 -11.96 0.252 93.4 23.6 15.198 150.4 -58 0.001 153.4 -17.5 0.132 -8.7 7.5 -14.57 0.187 48.4 23.3 14.717 90.5 -54 0.002 89.9 -19.5 0.106 -51.8 8.0 -15.90 0.160 12.5 23.2 14.575 33.6 -52 0.002 33.2 -22.7 0.073 -103.7 8.5 -16.48 0.150 -21.7 23.1 14.429 -20.9 -51 0.003 -16.5 -24.6 0.059 -172.2 9.0 -16.49 0.150 -58.8 23.1 14.408 -74.7 -47 0.004 -46.2 -23.7 0.065 119.7 9.5 -16.53 0.149 -100.8 23.2 14.455 -126.9 -47 0.004 -85.8 -21.9 0.080 70.3 10.0 -16.56 0.149 -147.1 23.2 14.462 -178.2 -46 0.005 -121.8 -21.0 0.089 31.0 10.5 -16.19 0.155 161.1 23.3 14.624 131.2 -45 0.006 -155.9 -21.3 0.086 -3.6 11.0 -15.63 0.165 108.2 23.4 14.926 80.4 -43 0.007 159.4 -22.6 0.074 -29.9 11.5 -14.36 0.191 54.8 23.6 15.226 29.4 -44 0.006 130.7 -23.8 0.064 -46.2 12.0 -13.22 0.218 3.0 23.8 15.497 -20.8 -42 0.008 88.0 -23.4 0.067 -59.0 12.5 -12.30 0.242 -50.7 23.7 15.483 -72.0 -41 0.008 49.2 -21.3 0.086 -90.7 13.0 -11.45 0.268 -102.0 23.7 15.450 -122.8 -41 0.008 14.5 -19.7 0.102 -130.4 13.5 -10.83 0.287 -154.6 23.6 15.143 -173.1 -40 0.010 -26.9 -17.8 0.127 179.7 14.0 -10.47 0.299 153.2 23.2 14.518 135.7 -40 0.009 -66.8 -16.0 0.157 128.3 14.5 -10.32 0.305 101.7 22.7 13.724 87.2 -39 0.010 -104.7 -14.4 0.189 79.9 15.0 -10.53 0.297 52.2 22.3 13.168 38.7 -40 0.009 -146.3 -13.5 0.211 34.8 15.5 -10.62 0.294 8.9 22.1 12.858 -8.5 -40 0.009 174.6 -13.2 0.218 -4.6 16.0 -10.79 0.289 -33.2 21.9 12.536 -56.2 -42 0.008 138.1 -13.6 0.208 -38.0 16.5 -10.97 0.283 -67.4 21.5 11.970 -102.6 -40 0.009 116.4 -12.7 0.231 -65.0 17.0 -11.25 0.274 -109.8 21.4 11.796 -151.3 -39 0.011 77.9 -12.1 0.247 -101.8 17.5 -11.47 0.267 -152.2 21.0 11.331 162.1 -38 0.012 38.0 -12.1 0.246 -140.0 18.0 -12.36 0.241 168.0 20.9 11.208 115.8 -38 0.012 -5.3 -13.1 0.220 179.3 18.5 -13.30 0.217 132.5 20.6 10.720 69.0 -38 0.012 -40.0 -14.2 0.194 139.1 19.0 -13.86 0.203 99.5 20.4 10.474 21.3 -38 0.012 -82.3 -15.4 0.170 94.9 19.5 -13.77 0.205 67.3 20.1 10.158 -25.9 -39 0.011 -118.5 -16.5 0.148 44.7 20.0 -12.94 0.225 32.0 19.8 9.847 -74.5 -38 0.012 -161.5 -16.8 0.144 -5.1 20.5 -11.42 0.268 -6.3 19.4 9.413 -121.1 -39 0.011 162.1 -16.8 0.143 -51.5 21.0 -9.73 0.326 -49.1 18.5 8.500 -169.0 -39 0.011 124.7 -16.5 0.148 -92.9 21.5 -8.00 0.398 -94.4 18.2 8.140 142.8 -40 0.010 79.8 -16.1 0.156 -132.8 22.0 -6.54 0.471 -140.6 17.7 7.703 93.3 -40 0.010 35.1 -16.5 0.149 -167.4 22.5 -5.44 0.534 173.4 16.9 7.055 45.0 -41 0.009 2.9 -17.3 0.136 159.4 23.0 -5.12 0.554 128.5 16.3 6.535 -3.1 -43 0.007 -41.2 -21.9 0.080 138.2 23.5 -4.72 0.581 86.1 15.3 5.881 -54.0 -45 0.005 -84.6 -18.0 0.126 178.1 24.0 -4.17 0.618 44.3 13.7 4.894 -102.8 -47 0.004 -136.3 -11.5 0.265 141.6 24.5 -3.40 0.675 0.9 12.6 4.288 -147.1 -49 0.003 -162.8 -9.0 0.355 100.9 25.0 -2.65 0.737 -44.6 11.6 3.822 168.3 -50 0.003 134.1 -7.7 0.409 61.8 note: data obtained from icm fixture measurements fully de-embedded to package edge. output reference plane for s-parameters (view from package bottom) input reference plane for s-parameters
6 figure 20. simplified mmic schematic. figure 19. typical application. figure 21. demonstration board (available upon request). biasing and operation the ammc-6220 is normally biased with a single positive drain supply connected to both v d pin through bypass capacitors as shown in figure 19. the recom- mended supply voltage is 3 v. it is important to have 0.1 f bypass capacitor, and the capacitor should be placed as close to the component as possible. the ammc-6220 does not require a negative gate voltage to bias any of the three stages. no ground wires are needed because all ground connections are made with plated through-holes to the backside of the package. refer the absolute maximum ratings table for allowed dc and thermal conditions. v d (typ. 3 v) 0.1 f rfin rfout 84 123 765 100 pf 100 pf package base gnd rfin rfout v d
7 outline drawing recommended smt attachment the ammp packaged devices are compatible with high volume surface mount pcb assembly processes. the pcb material and mounting pattern, as defined in the data sheet, optimizes rf performance and is strongly recommended. an electronic drawing of the land pattern is available upon request from agilent sales & application engineering. manual assembly 1. follow esd precautions while handling packages. 2. handling should be along the edges with tweezers. 3. recommended attachment is conductive solder paste. please see recommended sol- der reflow profile. conductive epoxy is not recommended. hand soldering is not recom- mended. 4. apply solder paste using a stencil printer or dot place- ment. the volume of solder paste will be dependent on pcb and component layout and should be controlled to ensure consistent mechanical and electrical performance. 5. follow solder paste and vendor? recommendations when developing a solder reflow profile. a standard profile will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. 6. packages have been qualified to withstand a peak temperature of 260 c for 20 seconds. verify that the profile will not expose device beyond these limits. suggested pcb material and land pattern figure 22. figure 23. figure 24. 3 2 1 4 8 back view 0.012 (0.30) 0.016 (0.40) 0.014 (0.365) 0.011 (0.28) 0.018 (0.46) 0.114 (2.90) 0.100 (2.54) 0.100 (2.54) 0.059 (1.5) 0.126 (3.2) 0.029 (0.75) 567 0.016 (0.40) 0.93 (2.36) 0.028 (0.70) notes: 1. indicates pin 1 2. dimensions are in inches (millimeters) 3. dimensional tolerances: 0.002 inch (0.5mm) 0.010 (0.25) 0.093 (2.36) 0.011 (0.28) 0.016(0.40) 0.0095 (0.24) 0.012 (0.30) 0.016 (0.40) ground vias should be solder filled 0.020 (0.50) 0.059 (1.50) 0.126 (3.20) inches (millimeters). material is rogers ro4350, 0.010-inch thick. 0.018 (0.46) 0.018 (0.46) 0.0095 (0.024) 0.114 (2.90) 1 2 3 7 6 5 4 8 0.075 (1.91) 0.200 (5.08) 0.200 (5.08) ammp xxxx ywwdnn front view side view
8 solder reflow profile the most commonly used solder reflow method is accomplished in a belt furnace using convection heat transfer. the suggested reflow profile for automated reflow processes is shown in figure 25. this profile is designed to ensure reliable finished joints. however, the profile indicated in figure 25 will vary among differ- ent solder pastes from different manufacturers and is shown here for reference only. figure 25. suggested lead-free reflow profile for snagcu solder paste. figure 26. stencil outline drawing (mm). stencil design guidelines a properly designed solder screen or stencil is required to ensure optimum amount of solder paste is deposited onto the pcb pads. the recommended stencil layout is shown in figure 26. the stencil has a solder paste deposition opening approximately 70% to 90% of the pcb pad. reducing stencil opening can potentially generate more voids underneath. on the other hand, stencil open- ings larger than 100% will lead to excessive solder paste smear or bridging across the i/o pads. considering the fact that solder paste thickness will directly affect the quality of the solder joint, a good choice is to use a laser cut stencil composed of 0.127 mm (5 mils) thick stainless steel which is capable of producing the re- quired fine stencil outline. the combined pcb and stencil layout is shown in figure 27. figure 27. combined pcb and stencil layouts (mm). time (seconds) 300 250 200 150 100 50 0 50 100 150 200 250 300 0 temperature ( c) peak = 250 5 c melting point = 218 c ramp 1 ramp 2 reflow cooling preheat 0.60 1.80 3.20 0.67 0.36 0.40 0.40 0.27 0.30 2.90 1.60 stencil opening 0.36 0.40 0.46 0.60 0.95 0.40 0.36 0.36 4x r0.14 1.60 0.70 0.9550 1.80 0.27 0.36
9 AMMP-6220 part number ordering information part number devices per container container AMMP-6220-blk 10 antistatic bag AMMP-6220-tr1 100 7?reel AMMP-6220-tr2 500 7?reel device orientation (top view) carrier tape and pocket dimensions 12 mm 4 mm ammp xxxx ammp xxxx ammp xxxx k o k o b o b o a o section b-b section a-a a o 0.30 0.05 b b aa 1.75 0.10 5.50 0.05 12.00 0.10 r 0.50 typ. ? 1.55 0.05 8.00 0.10 ? 1.50 (min.) 4.00 0.10 see note #2 2.00 0.05 a o : b o : k o : pitch: width: 5.30 5.30 2.20 8.00 12.00 notes: 1. a o and b o measured at 0.3 mm above base of pocket. 2. 10 pitches cumulative tolerance is 0.2 mm. 3. dimensions are in millimeters (mm). ao bo ko min. 5.20 5.20 2.10 nom. 5.30 5.30 2.20 max. 5.40 5.40 2.30
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152 (domestic/interna- tional), or 0120-61-1280 (domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ?2005 agilent technologies, inc. february 14, 2005 5989-2278en
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